1 ? ha-5177/883 ultra low offset voltage operational amplifier description the ha-5177/883 is a monolithic, all bipolar, precision oper- ational amplifier, utilizing in tersil dielectric isolation and advance processing techniques. this design features a com- bination of precision input characteristics, wide gain band- width (2mhz) and high speed (0.5v/ s min) and is an improved version of the ha-5135/883. the ha-5177/883 uses advanced matching techniques and laser trimming to produce low offset voltage (10 v typ, 60 v max) and low offset voltage drift (0.1 v/ o c typ, 0.6 v/ o c max). this design also features low voltage noise (9nv/ hz typ), low current noise (0.32pa/ hz typ), nanoamp input currents, and 126db minimum gain. these outstanding features along with high cmrr (140db typ, 110db min) and high psrr (135db typ, 110db min) make this unity gain stable amplifier ideal for high resolution data acquisition systems, precis ion integrators, and low level transducer amplifiers. part number information part number temperature range package ha4-5177/883 -55 o c to +125 o c 20 lead ceramic lcc features ? this circuit is processed in accordance to mil-std- 883 and is fully conformant under the provisions of paragraph 1.2.1. low offset voltage. . . . . . . . . . . . . . . . . . . . .60 v (max) 10 v (typ) low offset voltage drift . . . . . . . . . . . . 0.6 v/ o c (max) 0.1 v/ o c (typ) high voltage gain . . . . . . . . . . . . . . . . . . . . 126db (min) 150db (typ) high cmrr . . . . . . . . . . . . . . . . . . . . . . . . . . 110db (min) 140db (typ) high psrr . . . . . . . . . . . . . . . . . . . . . . . . . . 110db (min) 135db (typ) low noise . . . . . . . . . . . . . . . . . . . . . . . . 11nv/ hz (max) 9nv/ hz (typ) low power consumption . . . . . . . . . . . . . .51mw (max) wide gain bandwidth product . . . . . . . . . . .2mhz (min) unity gain stable applications high gain instrumentation amplifiers precision control systems precision integrators high resolution data converters precision threshold detectors low level transducer amplifiers november 2004 spec number 511041-883 fn3733.3 pinout ha-5177/883 (clcc) top view 4 5 6 7 8 9101112 13 3212019 15 14 18 17 16 bal 2 nc v- nc nc nc nc nc v+ out nc nc nc nc bal1 nc nc + -in +in nc - caution: these devices are sensitive to electrostatic discharge; follow proper ic handling procedures. 1-888-intersil or 321-724-7143 | intersil (and design) is a registered trademark of intersil americas inc. copyright ? intersil americas inc. 2002, 2004. all rights reserved o b s o l e t e p r o d u c t n o r e c o m m e n d e d r e p l a c e m e n t c o n t a c t o u r t e c h n i c a l s u p p o r t c e n t e r a t 1 - 8 8 8 - i n t e r s i l o r w w w . i n t e r s i l . c o m / t s c
2 ha-5177/883 absolute maximum ratings thermal information voltage between v+ and v- terminals . . . . . . . . . . . . . . . . . . . . 44v differential input voltage (note 1). . . . . . . . . . . . . . . . . . . . . . . . . 7v voltage at either input terminal . . . . . . . . . . . . . . . . . . . . . . v+ to v- input current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25ma output current . . . . . . . . . . . . . . . . . . . .full short circuit protection junction temperature (t j ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175 o c storage temperature range . . . . . . . . . . . . . . . . . -65 o c to +150 o c esd rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000v lead temperature (soldering 10s) . . . . . . . . . . . . . . . . . . . . +300 o c thermal resistance ja jc ceramic lcc package . . . . . . . . . . . . . . 80 o c/w 28 o c/w package power dissipation limit at +75 o c for t j +175 o c ceramic lcc package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54w package power dissipation derating factor above +75 o c ceramic lcc package . . . . . . . . . . . . . . . . . . . . . . . . 15.4mw/ o c caution: stresses above those listed in ?absolute maximum ratings ? may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicat ed in the operational sections of this specification is not impl ied. note: 1. ja is measured with the component mounted on a low effective thermal conductivity test board in free air. see tech brief tb379 for details. operating conditions operating temperature range . . . . . . . . . . . . . . . . -55 o c to +125 o c operating supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15v v incm 1/2 (v+ - v-) r l 600 ? table 1. dc electrical performance characteristics device tested at: v supply = 15v, r source = 5 0? , r load = 100k ? , v out = 0v, unless otherwise specified. parameters symbol conditions group a subgroups temperature limits units min max input offset voltage v io v cm = 0v 1 +25 o c -60 60 v 2, 3 +125 o c, -55 o c -100 100 v input bias current i b v cm = 0v, r s = 10k ? , 5 0? 1+25 o c-66na 2, 3 +125 o c, -55 o c-8 8 na input offset current i io v cm = 0v, +r s = 10k ? , -r s = 10k ? 1+25 o c-66na 2, 3 +125 o c, -55 o c-8 8 na common mode range +cmr v+ = +3v, v- = -27v 1 +25 o c12-v 2, 3 +125 o c, -55 o c12 - v -cmr v+ = +27v, v- = -3v 1 +25 o c--12v 2, 3 +125 o c, -55 o c--12v large signal voltage gain +a vol v out = 0v and +10v, r l = 2k ? 4+25 o c 126 - db 5, 6 +125 o c, -55 o c 120 - db -a vol v out = 0v and -10v, r l = 2k ? 4+25 o c 126 - db 5, 6 +125 o c, -55 o c 120 - db common mode rejection ratio +cmrr ? v cm = 10v, v+ = +5v, v- = - 25v, v out = -10 1+25 o c 116 - db 2, 3 +125 o c, -55 o c 110 - db -cmrr ? v cm = 10v, v+ = +25v, v- = - 5v, v out = +10 1+25 o c 116 - db 2, 3 +125 o c, -55 o c 110 - db output voltage swing +v out1 r l = 2k ? 4+25 o c12-v 5, 6 +125 o c, -55 o c12 - v -v out1 r l = 2k ? 4+25 o c--12v 5, 6 +125 o c, -55 o c--12v +v out2 r l = 600 ? 4+25 o c10-v -v out2 r l = 600 ? 4+25 o c--10v +i b i ? b + 2 ---------------------------- - ?? ?? spec number 511041-883
3 spec number 511041-883 ha-5177/883 output current +i out v out = -10v 4 +25 o c15-ma 5, 6 +125 o c, -55 o c15 - ma -i out v out = +10v 4 +25 o c--15ma 5, 6 +125 o c, -55 o c--15ma quiescent power supply current +i cc v out = 0v, i out = 0ma 1+25 o c-1.7ma 2, 3 +125 o c, -55 o c-1.7ma -i cc v out = 0v, i out = 0ma 1+25 o c-1.7-ma 2, 3 +125 o c, -55 o c-1.7 - ma power supply rejection ratio +psrr ? v sup = 15v, v+ = +5v, v- = - 15v, v+ = +20v, v- = - 15v 1+25 o c 110 - db 2, 3 +125 o c, -55 o c 110 - db -psrr ? v sup = 15v, v+ = +15v, v- = - 5v, v+ = +15v, v- = - 20v 1+25 o c 110 - db 2, 3 +125 o c, -55 o c 110 - db offset voltage adjustment +v io adj note 2 1 +25 o c0.3-mv 2, 3 +125 o c, -55 o c0.3 - mv -v io adj note 2 1 +25 o c--0.3mv 2, 3 +125 o c, -55 o c--0.3mv notes: 1. the input stage has series 500 ? resistors along with back to back diodes. this provi des large differential input voltage protection for a slight increase in noise voltage. 2. this test is for functionality only to assure adjustment through 0v. table 2. ac electrical performance characteristics device tested at: v supply = 15v, r source = 50 ? , r load = 2k ? , c load = 50pf, a vcl = +1v/v, unless otherwise specified. parameters symbol conditions group a subgroups temperature limits units min max slew rate +sr v out = -3v to +3v, v in s.r. 25v/ s 7+25 o c0.5-v/ s -sr v out = +3v to -3v, v in s.r. 25v/ s 7+25 o c0.5-v/ s rise and fall time t r v out = 0 to +200mv 10% t r 90% 7+25 o c - 420 ns t f v out = 0 to -200mv 10% t f 90% 7+25 o c - 420 ns overshoot +os v out = 0 to +200mv 7 +25 o c-40% -os v out = 0 to -200mv 7 +25 o c-40% table 1. dc electrical performance characteristics (continued) device tested at: v supply = 15v, r source = 5 0? , r load = 100k ? , v out = 0v, unless otherwise specified. parameters symbol conditions group a subgroups temperature limits units min max
4 spec number 511041-883 ha-5177/883 table 3. electrical performance characteristics device characterized at: v supply = 15v, r load = 2k ? , c load = 50pf, a v = +1v/v, unless otherwise specified. parameters symbol conditions notes temperature limits units min max average offset voltage drift v io tc v cm = 0v 1 -55 o c to +125 o c- 0.6 v/ o c average offset current drift i io tc versus temperature 1 -55 o c to +125 o c - 40 pa/ o c average bias current drift i r tc versus temperature 1 -55 o c to +125 o c - 40 pa/ o c differential input resistance r in v cm = 0v 1 +25 o c20-m ? low frequency peak-to-peak noise voltage e np-p 0.1hz to 10hz 1 +25 o c-0.6 v p-p low frequency peak-to-peak noise current i np-p 0.1hz to 10hz 1 +25 o c - 45 pa p-p input noise voltage density e n r s = 20 ? , f o = 10hz 1 +25 o c - 18 nv / hz r s = 20 ? , f o = 100hz 1 +25 o c - 13 nv / hz r s = 20 ? , f o = 1khz 1 +25 o c - 11 nv / hz input noise current density i n r s = 2m ? , f o = 10hz 1 +25 o c-4pa / hz r s = 2m ? , f o = 100hz 1 +25 o c-2.3pa / hz r s = 2m ? , f o = 1khz 1 +25 o c-1pa / hz gain bandwidth product gbwp v o = 100mv, 1hz f o 100khz 1+25 o c2-mhz full power bandwidth fpbw v peak = 10v 1, 2 +25 o c8-khz minimum closed loop stable gain clsg r l = 2k ? , c l = 50pf 1 -55 o c to +125 o c + 1-v/v settling time t s to 0.1% for a 10v step 1 +25 o c-15 s output resistance r out open loop 1 +25 o c-70 ? power consumption pc v out = 0v, i out = 0ma 1, 3 -55 o c to +125 o c- 51 mw notes: 1. parameters listed in table 3 are contro lled via design or process parameters and are not directly tested at final production. these param- eters are lab characterized upon initial design release, or upon design changes. these parameters are guaranteed by characteriz ation based upon data from multiple production runs which reflect lot to lot and within lot variation. 2. full power bandwidth guarantee based on slew rate measurement using fpbw = slew rate/(2 v peak ). 3. power consumption based upon quiescent supply current test maximum. (no load on outputs.) table 4. electrical test requirements mil-std-883 test requirements subgroups (see tables 1 and 2) interim electrical parameters (pre burn-in) 1 final electrical test parameters 1 (note 1), 2, 3, 4, 5, 6, 7 group a test requirements 1, 2, 3, 4, 5, 6, 7 groups c and d endpoints 1 note: 1. pda applies to subgroup 1 only.
5 all intersil u.s. products are manufactured, asse mbled and tested utilizing iso9000 quality systems. intersil corporation?s quality certifications ca n be viewed at www.intersil.com/design/quality intersil products are sold by description only. intersil corpor ation reserves the right to make changes in circuit design, soft ware and/or specifications at any time without notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnishe d by intersil is believed to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of paten ts or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiari es. for information regarding intersil corporation and its products, see www.intersil.com ha-5177/883 die characteristics die dimensions: 72 x 103 x 19 mils 1 mils 1840 x 2620 x 483 m 25.4 m metallization: type: al, 1% cu thickness: 16k ? 2k ? glassivation: type: nitride (si3n4) over silox (sio2, 5% phos.) silox thickness: 12k ? 2k ? nitride thickness: 3.5k ? 1.5k ? worst case current density: 6.0 x 10 4 a/cm 2 substrate potential (powered up): v- transistor count: 71 process: bipolar dielectric isolation metallization mask layout ha-5177/883 bal1 v+ out nc v- +in -in bal2 spec number 511041-883
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